Keysight, WIN Semiconductors launch GaN MMIC design workflow - Investing.com

Keysight and WIN Semiconductors have launched a new GaN MMIC design workflow, marking a significant advancement in RF power device design. This collaborative effort integrates advanced design tools an... Read original →

The GaN MMIC design workflow co-developed by Keysight and WIN Semiconductors (Taiwan, China) tightly integrates EDA simulation, process design kits, and measurement validation, drastically shortening RF chip development cycles. This triggers a technical cascade: EDA vendors must refine nonlinear GaN models, while 5G infrastructure and LEO satellite firms will accelerate adoption of high-power-density architectures. From a compliance standpoint, reliance on U.S.-controlled high-frequency test equipment could inflate integration costs for non-U.S. foundries, deepening supply chain fragmentation. Competitors like Qorvo and Wolfspeed are likely to fortify proprietary PDK ecosystems to retain design-win control. Over the next 12–24 months, such vertically integrated workflows will become gatekeepers to GaN commercialization—mid-tier IDMs lacking closed-loop verification capabilities risk exclusion from premium RF markets, driving further industry consolidation.