GaN-on-SiC MMIC covers 10 MHz to 6 GHz - 5G Technology World

This article reports significant progress in gallium nitride (GaN) on silicon carbide (SiC) monolithic microwave integrated circuit (MMIC) technology, featuring a frequency range from 10 MHz to 6 GHz.... Read original →

The breakthrough in GaN-on-SiC MMIC technology is set to redefine performance benchmarks in RF devices, particularly for 5G base stations and satellite communications. This advancement accelerates upstream developments in SiC substrates and epitaxial processes, while driving downstream integration of high-efficiency power amplifiers and filters. From a compliance perspective, the technology offers strategic advantages in reducing reliance on imported high-end components amid global supply chain realignment, though geopolitical risks around SiC raw material and equipment sourcing remain. Major players are expected to intensify investments in mmWave frontend modules to secure early-mover advantages in 5G-A and future 6G. In the short term, the industry will see a dual trend of technology premium and capacity expansion, with long-term implications of a new wave of domestic RF chip substitution.