Industry Analysis
Hanwha’s ‘PLUS Global HBM Semiconductor’ ETF surpassing KRW 2 trillion signals structural demand from the AI agent era. Technologically, surging HBM orders are forcing TSV and CoWoS packaging capacity expansion, raising co-design barriers between logic and memory. Regulatory tightening by the U.S. and South Korea inflates Samsung and SK Hynix’s U.S. fab costs; long-term contracts with prepayments ease capex strain but harden supply chains geopolitically. Micron is scaling HBM3E output yet remains peripheral in TSMC’s CoWoS ecosystem, while Samsung accelerates GDDR7 to hedge HBM bottlenecks. Over the next 12–24 months, as memory’s share of data center spend jumps to 73%, HBM pricing will dictate the DRAM supercycle—making today’s ETF valuation gap a strategic entry point before systemic repricing by 2027.
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