Iron Device Joins Government EV Power Module Development Project - thelec.net

Iron Device has been selected as a joint research institution for a government-backed project to develop embedded power modules for electric vehicle drive circuits. Led by Semi-Powerex, the initiative... Read original →

South Korea’s government-backed GaN power module initiative signals a strategic push to close its high-voltage semiconductor loop. Iron Device’s development of a 2,500V isolated dual-channel GaN gate driver will catalyze upstream adoption of EUV and sub-3nm processes in power ICs, forcing advances in packaging materials and thermal solutions. While state funding lowers near-term R&D costs, the modest 8.3 billion KRW budget—well below global benchmarks—risks constraining yield ramp and deepening reliance on Japanese substrates and U.S. test equipment. Infineon and STMicroelectronics will likely accelerate localized GaN partnerships in Asia to block Korean entrants from global Tier 1 supply chains. Within 18 months, this project will shift automotive GaN from performance validation to cost-driven competition. If Iron Device successfully extends its driver ICs into energy storage inverters and ultra-fast chargers, it could unlock a second growth vector by 2027.