Is the 'dual powerhouse era' of HBM approaching? UBS Group: Samsung's market share is expected to catch up with SK Hynix next year. - 富途牛牛

The semiconductor industry's growing demand for high-performance storage is driving significant attention toward High Bandwidth Memory (HBM) technology. UBS Group's recent analysis indicates that Sams... Read original →

Samsung’s HBM surge stems not just from capacity scaling but refined TSV and hybrid bonding integration, pressuring equipment vendors to boost 3D stacking yields and forcing AI chip designers to rethink memory subsystem margins. SK Hynix’s reliance on HBM3E creates strategic fragility despite its current client lead. While U.S.-Korea tech alignment grants Samsung access to advanced packaging, it also heightens exposure to export controls, demanding supply chain recalibration. Over the next year, SK Hynix will likely lock in NVIDIA’s next-gen platform or open HBM4 interfaces to defend share, while Samsung exploits TSMC’s CoWoS shortages with bundled HBM-packaging offers. The long-tail shift is clear: HBM competition is pivoting from peak bandwidth to cost and delivery reliability—any DRAM player missing the 2027 ecosystem window risks permanent marginalization.