Keysight, WIN Semiconductors launch GaN MMIC design workflow By Investing.com - Investing.com Canada

Keysight and WIN Semiconductors have launched a GaN MMIC design workflow, marking a significant advancement in RF semiconductor design. This collaborative effort provides a comprehensive solution for ... Read original →

Keysight’s collaboration with WIN Semiconductors (Taiwan, China) on a GaN MMIC design flow represents a strategic vertical integration of EDA tools and foundry processes. Technically, it accelerates the obsolescence of silicon-based LDMOS in high-frequency RF applications, particularly in 5G macro base stations and satcom power amplifiers. From a compliance standpoint, reliance on U.S.-origin EDA cores introduces supply chain fragility for non-U.S. customers amid tightening export controls on GaN technologies. Competitors like Qorvo and NXP will likely respond by tightening their own design-manufacturing loops or forging alternative alliances. Over the next 12–24 months, this move will push GaN adoption in Sub-6GHz infrastructure beyond 40% market share, forcing a fundamental reassessment of RF front-end cost models and technology roadmaps across the industry.