Industry Analysis
The memory supercycle is fundamentally driven by AI infrastructure’s insatiable demand for high-bandwidth, low-latency storage. Micron’s 1β DRAM and 232-layer NAND give it a defensible edge in HBM and enterprise SSDs, while SanDisk—leveraging Western Digital’s vertical integration—dominates UFS 4.0 and embedded consumer storage. Adoption of 3nm and EUV lithography raises yield ceilings but also capex burdens; with TSMC prioritizing logic chips, memory makers must build their own EUV lines, raising barriers to entry. Geopolitically, U.S. CHIPS Act funding favors logic over memory, leaving SanDisk—under Japanese ownership—vulnerable to scrutiny. Samsung and SK Hynix will likely accelerate HBM4 development and undercut DRAM pricing to contain Micron’s market share gains. Over the next 18 months, the sector will pivot from capacity ramp-up to profit realization via technology leadership: early EUV adopters will capture outsized returns, while laggards risk exit from the high-end segment.
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