[News] MIT Announced Breakthrough in GaN-on-Single-Crystal Diamond Thermal Management Technology - TrendForce

MIT announced a breakthrough in gallium nitride (GaN)-on-single-crystal diamond thermal management technology, successfully embedding GaN transistors into ultra-thin diamond layers to overcome major t... Read original →

MIT’s GaN-on-diamond integration breakthrough triggers a paradigm shift in thermal management for wide-bandgap semiconductors. By embedding GaN dielets into single-crystal diamond interposers, it sidesteps parasitic capacitance plaguing surface-coated approaches, enabling high-efficiency millimeter-wave power amplifiers critical for 6G and LEO satellite terminals. Upstream, demand for electronic-grade single-crystal diamond substrates will surge—favoring Sumitomo Electric and AKHAN—while downstream OSATs must overhaul 3D integration flows. Geopolitically, potential U.S. export controls could accelerate onshoring of RF supply chains, forcing foundries in Taiwan, China and Hong Kong, China to develop alternative thermal strategies. Competitors like Qorvo, NXP, and Wolfspeed will likely fast-track proprietary diamond-integration IP or form consortia. Within 18 months, this approach may transition from lab validation to pilot production, becoming a cornerstone of 6G infrastructure and redefining performance ceilings in high-power electronics.