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ON Semiconductor unveils new GaN power module for faster, cooler EV charging - AD HOC NEWS

www.ad-hoc-news.de 2026-06-17 AD HOC NEWS
Entities
Tags
SemiconductorPower ModuleEV ChargingGaN TechnologySilicon CarbideElectric VehiclesIndustrial Power DesignCharging InfrastructurePower ElectronicsEnergy EfficiencyModular DesignB2B Market
News Summary
ON Semiconductor has unveiled its latest silicon carbide and gallium nitride (GaN)-based power module, the EliteSiC FastCharge Power Module, aimed at enhancing the efficiency and performance of next-g... Read original →
Industry Analysis
ON Semiconductor’s EliteSiC FastCharge module marks a strategic pivot from discrete wide-bandgap components to integrated power systems. Technically, it forces magnetic, thermal, and gate-driver suppliers into tighter co-design cycles, accelerating adoption of high-density architectures. Regulatory pressures—especially U.S. IRA mandates requiring localized content in EV infrastructure—are pushing ON to scale Mexican and Czech fabs to secure supply chains. Competitors like Infineon and STMicroelectronics will likely counter with even more integrated CoolSiC or STPOWER modules, possibly bundling control software to lock in customers. Within 18 months, the DC fast-charging race will shift from peak power to total cost of ownership and spatial efficiency. ON’s bet on standardized, plug-and-play modules aims to redefine industrial power design as modular, certifiable building blocks—effectively turning chargers into scalable power legos.
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