Revealed the True Nature of the 'Killer Defect' Undermining AI Semiconductors and Electric Vehicles [Reading Science] - 아시아경제

Korea's Electronics Technology Research Institute (KERI) announced on June 21 that it has, for the first time globally, identified the internal structure and formation mechanism of trapezoidal defects... Read original →

KERI’s atomic-level decoding of trapezoidal defects (TZD) in SiC marks a turning point for wide-bandgap semiconductor yields. Technically, this forces epitaxial process recalibration and boosts demand for advanced metrology tools from firms like Horiba STEK Korea, while pressuring substrate suppliers such as Wolfspeed to accelerate defect mitigation. Regulatory shifts in the U.S. and EU now tie power semiconductor subsidies to domestic defect analytics capabilities—excluding smaller players lacking synchrotron or HR-STEM access. Strategically, STMicroelectronics and Infineon will likely hasten 6-inch SiC yield ramp-ups, while Taiwan, China-based wafermakers may leverage Korean research partnerships for data advantage. Within 18 months, TZD control will dictate SiC wafer pricing power, enabling leading IDMs to erect quality-based IP moats that widen the gap with second-tier competitors.