ROHM brings TO-247-class cooling to surface-mount SiC MOSFET package - Charged EVs

ROHM's introduction of TO-247-class cooling for surface-mount SiC MOSFET packaging represents a significant advancement in power semiconductor technology for electric vehicles. This innovation address... Read original →

ROHM’s integration of TO-247-class thermal performance into a surface-mount SiC MOSFET package bypasses traditional cooling bottlenecks through packaging innovation. This forces substrate suppliers to accelerate high-thermal-conductivity dielectric development and compels EV inverter designers to re-engineer PCB layouts for higher power density. Amid tightening EU/US localization mandates and carbon tariffs, the solution reduces reliance on liquid cooling, cutting BOM costs and enhancing supply chain resilience. Competitors like Infineon and Wolfspeed will likely fast-track automotive qualification of TOLL or similar packages, while STMicroelectronics may leverage its 8-inch SiC wafer scale to undercut pricing. Within 18 months, such high-thermal SMD devices will become standard in 800V architectures, prompting AEC-Q101 revisions to include stricter thermal cycling tests and accelerating the obsolescence of through-hole power packages.