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Samsung could become HBM market share leader in 2027 - digitimes

www.digitimes.com 2026-06-29 digitimes
Entities
Technologies:HBM4HBM1c DRAM
Tags
High Bandwidth MemoryHBM marketSamsung ElectronicsSK HynixHBM4 technologySixth-generation HBMDRAM productionSemiconductor marketMemory technologyChip manufacturingTechnology competitionSemiconductor supply chain
News Summary
According to DIGITIMES, Samsung Electronics could overtake SK Hynix to become the global leader in the high-bandwidth memory (HBM) market by 2027, driven by competitive advantages of HBM4 technology. ... Read original →
Industry Analysis
Samsung’s potential HBM leadership by 2027 hinges on its 1c-node DRAM, which uniquely balances HBM4 yield and cost—forcing upstream TSV and micro-bump packaging to accelerate upgrades, while downstream AI accelerators must redesign memory interfaces. Geopolitically, tighter U.S.-led export controls disadvantage SK Hynix’s expansion, whereas Samsung’s vertically integrated Korean supply chain mitigates compliance risk. In response, SK Hynix will likely fast-track HBM4E or even HBM5 roadmaps and deepen co-validation ties with NVIDIA and AMD. Within 18 months, HBM will shift from a premium option to a baseline requirement for AI chips, pulling mid-tier GPUs and edge AI servers into adoption—and widening the performance chasm that could permanently sideline second-tier DRAM makers.
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