TXST researchers help solve a persistent problem in next-generation semiconductors - TXState

Researchers at Texas State University (TXST) in collaboration with Atomera have developed a novel manufacturing technology that addresses a long-standing performance limitation in gallium nitride (GaN... Read original →

The TXST-Atomera breakthrough represents a materials-level intervention that directly targets a decades-old GaN-on-silicon bottleneck. By embedding an oxygen-rich barrier via MST to suppress interfacial impurity migration, the innovation not only enhances RF linearity but also paves the way for GaN-on-Si compatibility with sub-3nm EUV processes. This will pressure silicon wafer suppliers to refine oxygen-controlled crystal growth and empower RF front-end vendors to undercut SiC-based rivals in 5G mmWave and LEO satellite markets. Strategically, reduced reliance on exotic substrates like sapphire mitigates exposure to U.S. export controls on wide-bandgap equipment, bolstering supply chain security. Expect Qorvo and Wolfspeed to counter with aggressive IP acquisitions or deeper U.S. academic partnerships. If automotive-grade reliability is validated within 18 months, this approach could trigger a cost inflection point in base station PAs and EV onboard chargers—reshaping the economics of power electronics.