U.S. court doubts DRAM collusion as HBM shift explains price surge - CHOSUNBIZ - Chosunbiz

U.S. courts have expressed skepticism toward allegations of DRAM price fixing by Samsung Electronics, SK Hynix, and Micron, suggesting that current market dynamics are better explained by competitive ... Read original →

The U.S. court’s skepticism toward DRAM price-fixing claims underscores a fundamental tech-driven market realignment, not collusion. Surging AI demand has forced Samsung, SK hynix, and Micron to pivot capacity from legacy DDR4/DDR3 to HBM—a structural shift that naturally inflates prices. This transition accelerates TSV and advanced packaging innovation while starving commodity DRAM investment. From a compliance standpoint, memory makers must meticulously document capacity decisions to preempt antitrust misinterpretation. Strategically, failed litigation may embolden the Big Three to aggressively expand HBM output, widening the technology gap with second-tier players. Over the next 12–24 months, HBM will become the “new oil” of AI infrastructure, shifting geopolitical focus from pricing to supply chain sovereignty, while legacy DRAM faces cyclical shortages due to misallocated capacity.