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(Source: RootSemicon) RootSemicon said on June 11 it had been selected as the lead organization for a project to develop domestically produced 3300-volt silicon carbide (SiC) power modules. The project is overseen by South Korea's Ministry of Trade, Industry and Energy, while the Korea Evaluation Institute of Industrial Technology (KEIT) serves as the supervising agency. The project is worth abo

Navitas introduces isolated through-hole package for 1200–3300V SiC MOSFETs Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has launched its new UHV‑TO‑247‑4‑ISO package, setting what is claimed to be a new benchmark for high‑performance discrete power devices. Featuring over 12mm pin-to-pin creepage and greater than 6000V