Semiconductor News & Analysis Feed

8 articles

2026-09-25

Toshiba launches 3300V SiC MOSFET module - Semiconductor Today

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www.semiconductor-today.com 2026-09-25

2026-09-24

Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment - The Joplin Globe

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www.joplinglobe.com 2026-09-24

2026-09-24

Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment - Bluefield Daily Telegraph

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www.bdtonline.com 2026-09-24

2026-09-24

Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment - Eagle-Tribune

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www.eagletribune.com 2026-09-24

2026-09-24

Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment - newspressnow.com

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www.newspressnow.com 2026-09-24

2026-09-24

Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment - businesswire.com

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news.google.com 2026-09-24

2026-09-24

Toshiba Launches 3300V SiC MOSFET Module with H… - uniindia.com

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www.uniindia.com 2026-09-24

2026-06-09

Navitas introduces isolated through-hole package for 1200–3300V SiC MOSFETs - Semiconductor Today

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www.semiconductor-today.com 2026-06-09

Navitas has introduced a new UHV-TO-247-4-ISO isolated through-hole package designed for 1200V to 3300V SiC MOSFETs, setting a new benchmark for high-performance discrete power devices. The package features over 12mm creepage distance and more than 6000V integrated isolation, delivering module-like

SiC MOSFET Power Semiconductor Isolated Package GaN Technology Renewable Energy Data Center Power Electronics Thermal Management

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