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SK Hynix is preparing to begin mass production of its next-generation 375-layer 3D NAND flash memory by year-end, while pushing ahead with a broader capacity buildout and moving toward a US listing as early as August.

[News] SK hynix Advances DRAM and NAND Roadmap, Targets 3x Wafer Output by 2034, 375-Layer NAND at Year-End 2026-06-11 Semiconductors editor News Please note that this article cites information from Nikkei, The Elec, Newsis, Hankyung, and Global Economic. While SK hynix had only last week outlined plans to double capacity over the next five years, the memory giant is now signaling an eve