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On May 27, 2026, USI, a global leader in electronic design and manufacturing services, unveiled advanced silicon carbide (SiC) chip-embedded packaging technology at PCIM Europe 2026. The innovation integrates SiC dies into multilayer ABF substrates using Single-Side Copper Exposed (SSC) module packa

On May 27, 2026, USI, a global leader in electronic design and manufacturing services, unveiled breakthrough advancements in advanced power semiconductor packaging technology at PCIM Europe 2026. The company showcased its capability to embed silicon carbide (SiC) dies into multilayer ABF substrates

USI's advanced SiC chip-embedded packaging technology showcased at PCIM Europe 2026 represents a significant breakthrough in power semiconductor technology. SiC, as a third-generation semiconductor material, offers superior performance characteristics including high power density, efficiency, and th

On May 27, 2026, USI, a global leader in electronic design and manufacturing services, announced a breakthrough in advanced power semiconductor packaging technology designed for next-generation power solutions. The company successfully embedded silicon carbide (SiC) dies into multilayer ABF substrat

On May 27, 2026, USI, a global leader in electronic design and manufacturing services, unveiled breakthrough advancements in advanced power semiconductor packaging technology at PCIM Europe 2026. The company showcased its innovative approach of embedding silicon carbide (SiC) dies into multilayer AB

USI, a global leader in electronic design and manufacturing services, has unveiled a breakthrough in advanced power semiconductor packaging technology at PCIM Europe 2026. The company successfully embedded silicon carbide (SiC) dies into multilayer ABF substrates and integrated ceramic substrate ins