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This article explores the accelerated adoption of gallium nitride (GaN) technology in power electronics through end-to-end design and validation processes enabling short-loop innovation. GaN, as a wide bandgap semiconductor material, offers significant advantages including high power density, effici

GlobalFoundries has achieved significant progress in gallium nitride (GaN) technology adoption through end-to-end design and validation process optimization, substantially accelerating GaN commercialization. GaN, as a wide bandgap semiconductor material, demonstrates tremendous potential in RF power