Semiconductor News & Analysis Feed
13 articles
2026-09-02
marklapedus.substack.com
2026-09-02
2026-08-20
www.semiconductor-today.com
2026-08-20
2026-07-07
semiengineering.com
2026-07-07
As applications such as electric vehicles, fast-charging infrastructure, renewable energy systems, and industrial power conversion demand higher performance from power semiconductors, wide-bandgap materials like silicon carbide (SiC) and gallium nitride (GaN) are gaining prominence. These materials
2026-06-26
www.indexbox.io
2026-06-26
According to IndexBox market analysis report, the oxide removal powder market is expected to accelerate growth by 2035, primarily driven by the large-scale expansion of gallium nitride (GaN) and silicon carbide (SiC) device production. The rapid development of emerging applications such as 5G commun
2026-06-24
electronics360.globalspec.com
2026-06-24
CGD (Circuit Gate Design) has introduced a new 650V ICeGaN power device specifically designed for automotive applications, aimed at significantly enhancing electric vehicle range. This innovative device leverages advanced GaN (gallium nitride) technology, offering higher efficiency and smaller form
2026-06-15
www.sustainableconstruction-now.com
2026-06-15
Cambridge GaN Devices (CGD) and NXP Semiconductors have formed a long-term collaboration to accelerate the adoption of gallium nitride (GaN) devices in data center and automotive markets. As AI-driven compute demands surge, data centers are experiencing exponential growth in power consumption, with
2026-06-15
www.electropages.com
2026-06-15
2026-06-10
www.bisinfotech.com
2026-06-10
The strategic alliance between NXP and Cambridge GaN Devices represents a significant development in semiconductor technology for data center and automotive applications. Gallium Nitride (GaN) technology offers superior performance characteristics including high power density, efficiency, and freque
2026-06-05
www.newelectronics.co.uk
2026-06-05
Cambridge GaN Devices (CGD) has introduced a 650V gallium nitride (GaN) integrated circuit designed for automotive applications, aimed at improving electric vehicle (EV) powertrain efficiency. Based on CGD’s ICeGaN technology, the device supports smaller and lighter inverters, contributing to extend
2026-05-30
themachinemaker.com
2026-05-30
STMicroelectronics expands its PowerGaN portfolio with new 700V gallium nitride devices, reinforcing its leadership position in power semiconductor technology. Gallium nitride, as a third-generation semiconductor material, offers significant advantages including high power density, efficiency, and f
2026-05-30
advanced.onlinelibrary.wiley.com
2026-05-30
This research presents an advanced epitaxial strategy for fabricating vertical gallium nitride devices on silicon wafers. Gallium nitride, as a wide bandgap semiconductor material, holds significant application value in power electronic devices. This technological breakthrough addresses the limitati
2026-05-28
www.newelectronics.co.uk
2026-05-28
Mouser Electronics has entered into a global distribution agreement with Efficient Power Conversion (EPC), expanding access to EPC's enhancement-mode gallium nitride (eGaN) devices for engineers and designers worldwide. The collaboration aims to accelerate the adoption of high-efficiency power solut
2026-05-27
www.newelectronics.co.uk
2026-05-27
STMicroelectronics has introduced a new line of 700V gallium nitride (GaN) power semiconductors aimed at enhancing energy efficiency and power density in high-demand applications such as AI systems, industrial infrastructure, and robotics. These devices, part of the STPOWER portfolio, are designed t