www.semiconductor-today.com
2026-06-10
Nexperia has expanded its 650V industrial-grade high-power gallium nitride (GaN) FET portfolio to meet the growing demand for advanced power conversion applications. The new lineup includes devices with RDS(on) resistances of 35mΩ, 50mΩ, and 70mΩ, available in standard packages such as TO-247-3, TO-