Semiconductor News & Analysis Feed
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2026-08-29
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www.purdue.edu
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siliconangle.com
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xenospectrum.com
2026-08-26
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tomshardware.com
2026-08-24
Researchers at Kyoto University have developed a silicon carbide (SiC) transistor capable of operating at 600°C, using standard ion implantation techniques common in commercial chip fabrication. By employing a bottom-gate structure and double-well isolation, they significantly reduced the gap betwee
2026-08-24
www.moomoo.com
2026-08-24
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www.digitimes.com
2026-08-24
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2026-08-22
jp.ibtimes.com
2026-08-22