Semiconductor News & Analysis Feed

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2026-08-29
www.pcmag.com 2026-08-29
2026-08-29
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2026-08-28
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www.purdue.edu 2026-08-28
2026-08-27
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2026-08-27
siliconangle.com 2026-08-27
2026-08-26
xenospectrum.com 2026-08-26
2026-08-24
tomshardware.com 2026-08-24
Researchers at Kyoto University have developed a silicon carbide (SiC) transistor capable of operating at 600°C, using standard ion implantation techniques common in commercial chip fabrication. By employing a bottom-gate structure and double-well isolation, they significantly reduced the gap betwee
2026-08-24
www.moomoo.com 2026-08-24
2026-08-24
www.digitimes.com 2026-08-24
2026-08-24
digitimes.com 2026-08-24
2026-08-22
jp.ibtimes.com 2026-08-22