Semiconductor News & Analysis Feed
29 articles
2026-06-15
simplywall.st
2026-06-15
simplywall.st
Japan/Semiconductors/TSE:6963
Is ROHM (TSE:6963) Quietly Recasting Its Power-Semiconductor Edge Through Targeted SiC Design Wins?
June 15, 2026
Simply Wall St
Reviewed by Sasha Jovanovic
ROHM recently introduced its TSC3PAK surface-mount package for SiC MOSFETs for xEV onboard chargers, electric compressors and industrial power systems, while its 750 V SiC MOSFETs were adopted in battery backup un
2026-06-13
digitimes.com
2026-06-13
During a panel discussion between executives and research experts from Bosch, Infineon, Rohm Semiconductor, Nexperia, Wolfspeed, and Omdia at PCIM Europe 2026, one reality was made clear: frictionless, globalized chip manufacturing is ending. While the conversation reflected industry enthusiasm for new applications such as AI servers and industrial motor drives, it was tempered by macroeconomic re
2026-06-12
www.ad-hoc-news.de
2026-06-12
AD HOC NEWS
Rohm, JP3982800009
Rohm SCT4013DLL 750 V SiC MOSFET: AI-ready power device for modern data centers
12.06.2026 - 15:54:08 | ad-hoc-news.de
Rohm's SCT4013DLL 750 V SiC MOSFET targets high-efficiency, high-voltage power stages in AI server battery backup units and industrial systems, combining low loss, compact packaging and robust reliability for demanding data center and power applications.
Rohm
2026-06-12
www.eenewseurope.com
2026-06-12
eeNews Europe
ROHM has developed the TSC3PAK, a top-side cooling package for SiC MOSFETs aimed at high-voltage power conversion in electric vehicles and industrial systems. The 14.00 × 18.58 × 3.50 mm surface-mount package is designed to combine automated mounting with heat dissipation closer to conventional through-hole packages such as TO-247-4L.
2026-06-12
digitimes.com
2026-06-12
In power electronics engineering, Silicon Carbide (SiC) companies are competing to achieve the absolute lowest thermal resistance (Rth), with the mindset that lower heat signature equates a superior system. However, at PCIM Europe 2026, a collaborative project between Rohm Semiconductor, Schweizer Electronic, and eMoveUs GmbH exposed a revolutionary counter-intuitive shift in design philosophy: wi
2026-06-11
www.automotivepowertraintechnologyinternational.com
2026-06-11
Automotive Powertrain Technology International
ROHM has unveiled the TSC3PAK (14.00 x 18.58 x 3.50mm) cooling package for SiC MOSFETs, which adopts a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, enabling automated mounting while achieving heat dissipation performance comparable to that of conventional through-hole packages (TO-247-4L). This contributes to greater efficiency and reliabi
2026-06-10
www.semiconductor-today.com
2026-06-10
Semiconductor Today
ROHM has developed the TSC3PAK (14.00mm x 18.58mm x 3.50mm) package for silicon carbide (SiC) MOSFETs. Mass production began in June.
Picture: ROHM’s new top-side-cooling package for SiC MOSFETs.
By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the new product enables automated mounting while achieving heat dissipation performa
2026-06-10
www.manilatimes.net
2026-06-10
The Manila Times
KYOTO, Japan, June 10, 2026 /PRNewswire/ -- ROHM Co., Ltd. has developed the TSC3PAK (14.00 x 18.58 x 3.50 mm) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the new product enables automated mounting while achieving heat dissipation performance comparable to that of conventional through-hole packages (
2026-06-10
www.marketscreener.com
2026-06-10
marketscreener.com
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2026-06-09
www.azom.com
2026-06-09
AZoM
From Oxford Instruments
Jun 9 2026
Oxford Instruments, a leading provider of advanced plasma processing solutions for the compound semiconductor industry, today announced its role in supporting ROHM Co., Ltd. as the company transitions 650 V gallium nitride (GaN) power device manufacturing in-house.
ROHM brings 200 mm GaN device production in-house. Image Credit: Oxford Instruments
By leveragin
2026-06-09
www.bisinfotech.com
2026-06-09
Bisinfotech
www.bisinfotech.com
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2026-06-09
www.electronicsmedia.info
2026-06-09
Electronics Media
ROHM TSC3PAK SiC MOSFET Package Enables High-Efficiency Power Design for EVs
By Electronics Media -
June 9, 2026
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ROHM TSC3PAK SiC MOSFET Package – ROHM has developed the TSC3PAK (14.00 × 18.58 × 3.50mm) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the new product
2026-06-09
www.eenewseurope.com
2026-06-09
eeNews Europe
Japanese power semiconductor supplier ROHM Semiconductor is expanding its gallium nitride (GaN) manufacturing capabilities through a new production partnership with German equipment maker AIXTRON. The move will see ROHM bring GaN epitaxy in-house at its Hamamatsu plant in Japan using AIXTRON’s G10-GaN deposition platform.
2026-06-09
www.tradingview.com
2026-06-09
TradingView
News
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TradingView
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Key facts: AIXTRON to supply G10 GaN system to ROHM; Morgan Stanley >3%
Key facts: AIXTRON to supply G10 GaN system to ROHM; Morgan Stanley >3%
Less than 1 min read
AIXA
+3.33%
AIXTRON (AIXA) will supply a G10-GaN deposition system to ROHM's Hamamatsu plant for in-house 8" GaN epitaxy, targeting volume production of 650V and 100V power device wafers.
1
AIXTRON SE (AIXA): Morg
2026-06-08
www.tradingview.com
2026-06-08
TradingView
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ROHM's SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
ROHM's SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
2 min read
ROHM Co., Ltd./ Key word(s): Miscellaneous
ROHM's SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
08.06.2026 / 09:05 CET/CEST
The issuer is solely responsible for the content of this announceme
2026-06-08
www.marketscreener.com
2026-06-08
marketscreener.com
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2026-06-08
www.marketscreener.com
2026-06-08
marketscreener.com
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2026-06-04
www.semiconductor-today.com
2026-06-04
Semiconductor Today
ROHM’s 750V SiC MOSFET adopted in battery backup unit for AI servers
ROHM says that its 750V silicon carbide (SiC) MOSFET has been adopted in a BBU (battery backup unit) for AI server power supplies. With the rise of generative AI, AI server power systems are shifting to higher voltages and rapidly transitioning to HVDC (high-voltage direct current) architectures. In this environment, ROHM’s devi
2026-06-04
news.google.com
2026-06-04
GlobeNewswire
2026-06-03
www.presseagentur.com
2026-06-03
presseagentur.com
ROHM’s SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
Willich-Münchheide, Germany, June 03, 2026 – ROHM has announced that its 750 V SiC MOSFET has been adopted in a BBU (Battery Backup Unit) for AI server power supplies. With the rise of generative AI, AI server power systems are shifting to higher voltages and rapidly transitioning to HVDC (high-voltage direct current) a