Semiconductor News & Analysis Feed
20 articles
2026-08-06
www.electrive.com
2026-08-06
2026-08-06
autonews.gasgoo.com
2026-08-06
2026-08-06
autonews.gasgoo.com
2026-08-06
2026-07-24
www.electronicdesign.com
2026-07-24
2026-07-21
chargedevs.com
2026-07-21
2026-07-16
www.indexbox.io
2026-07-16
2026-07-15
www.bisinfotech.com
2026-07-15
2026-07-14
news.google.com
2026-07-14
2026-06-18
timestech.in
2026-06-18
Infineon's CIPOS Prime 1200V CoolSiC power modules are now available through Mouser Electronics, a leading NPI distributor for semiconductors and electronic components. Designed for high-performance automotive applications in xEVs, these modules integrate automotive-grade CoolSiC MOSFETs in a compac
2026-06-15
www.electronicsforyou.biz
2026-06-15
2026-06-10
www.thelec.net
2026-06-10
Infineon Technologies announced on June 8 that it will supply 1200V silicon carbide (SiC) power modules, branded as CoolSiC MOSFETs, to Siemens for use in its SENTRON 3QD2 solid-state circuit breaker system. Unlike traditional electromechanical breakers that operate on a millisecond timescale, semic
2026-06-10
www.newelectronics.co.uk
2026-06-10
The potential partnership between Nexperia and Semikron Danfoss in electric vehicle silicon carbide power modules reflects the semiconductor industry's response to the rapid growth of the EV market. This collaboration demonstrates how industry players are seeking strategic alliances to enhance compe
2026-06-09
www.electronicsmedia.info
2026-06-09
Nexperia and Semikron Danfoss have signed a Memorandum of Understanding (MoU) to explore strategic collaboration on silicon carbide (SiC)-based power modules for automotive traction inverter applications. The partnership combines Nexperia’s expertise in SiC semiconductor technology with Semikron Dan
2026-05-27
www.newelectronics.co.uk
2026-05-27
Microchip Technology has introduced a new range of 3.3 kV silicon carbide (SiC) power modules aimed at enabling high-voltage applications, particularly in next-generation data centers and solid-state transformer (SST) designs. These modules integrate 3.3 kV SiC MOSFETs and Schottky diodes in a stand
2026-05-25
news.google.com
2026-05-25
2026-05-21
investor.wolfspeed.com
2026-05-21
2026-05-21
news.google.com
2026-05-21
2026-05-21
www.bastillepost.com
2026-05-21
2026-05-21
www.joplinglobe.com
2026-05-21
2026-05-21
www.morningstar.com
2026-05-21