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JUNE 8, 2026 BYDAVID HUMPHREY CATEGORY: ACQUISITION OR PARTNERSHIP Siemens AG and Infineon Technologies AG are partnering to advance electrical protection and ensure reliable operations in data centers, production facilities, and battery storage systems. As part of the collaboration, Infineon will supply silicon carbide (SiC) power modules to Siemens for use in its SENTRON 3QD2 semiconductor circ

Search ELE Times Search HomeElectronicsUpgrading Factory Power Safety with Silicon Carbide Semiconductors from Infineon and Siemens Electronics Semiconductors and Chips News World News Upgrading Factory Power Safety with Silicon Carbide Semiconductors from Infineon and Siemens ELE Times News June 8, 2026 Silicon Carbide Semiconductor circuit breakers are fast-acting, semiconductor-based electronic

Press Release 08 June 2026 Siemens AG Zug Siemens and Infineon leverage silicon carbide technology to advance electrical protection in data centers and factories Infineon and Siemens collaborate to drive semiconductor circuit breaker technology for data centers, production facilities and battery storage systems Semiconductor circuit breakers are fast-acting, semiconductor-based electronic devices

Gelonghui, June 8｜Wolfspeed, a silicon carbide concept stock, surged over 13% in pre-market trading. According to reports, the company announced a partnership with General Electric Aerospace to jointly accelerate the application of high-voltage silicon carbide (SiC). Disclaimer: The content of this article solely reflects the author's opinion and does not represent the platform in any capacity. T

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At Computex 2026, much of the spotlight fell on the rapid evolution of AI data center infrastructure. Among the technologies drawing renewed attention was silicon carbide (SiC), a compound semiconductor material whose ability to handle high voltages and large... Some subscribers prefer to save their log-in information so they do not have to enter their User ID and Password each tim

Infineon’s, New Infineon’s New Silicon Carbide Chips Target the Power Grid Inside AI Data Centers 03.06.2026 - 10:00:53 | boerse-global.de Infineon introduces 750V/1200V CoolSiC JFETs for AI data center power infrastructure, enabling solid-state circuit breakers and hot-swap designs; shares surged 129% YTD. Unity setzt auf KI: Von Spielen bis zur Fabrik - Bild: über boerse-global.de Infineon is

June 1, 2026 Infineon sets new benchmark for electric vehicle inverters and introduces first silicon carbide power module operating at 205°C  Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has achieved a new milestone in power modules for electric vehicle inverters: The company is introducing a new 1300 V silicon carbide (SiC) module within the HybridPACK™ Drive family that is capable of cont

Infineon introduces first silicon carbide power module operating at 205°C Infineon Technologies AG of Munich, Germany is introducing a new 1300V silicon carbide (SiC) module within the HybridPACK Drive family that is capable of continuous operation at temperatures up to 205°C. Existing designs typically allow up to 175°C. This increase enables automotive OEMs and tier-1 suppliers to deliver highe

Share LinkedIn Teams WhatsApp Facebook Email X Neil Tyler 29 May 2026 More in Automotive Power RECOMMENDED Infineon's new quad‑phase TLVR power module to meet AI data centre demands Infineon expands CoolSiC module portfolio for high-voltage applications Infineon launches €91m European project to advance sustainable power electronics Infineon introduces first silicon carbide power module o

Purdue, GCCS partner to scale the future of silicon carbide Joint initiative targets critical thermal and power bottlenecks in global AI infrastructure Dan DeLaurentis, Purdue’s executive vice president for research, left, and Kuan-Ming Hsiung, GeChi Compound Semiconductor Co. chairman of the board, signed a research memorandum of understanding at Hovde Hall. The agreement will strengthen collab

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