Semiconductor News & Analysis Feed
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2026-06-04
www.tradingview.com
2026-06-04
TradingView
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2026-06-04
www.semiconductor-today.com
2026-06-04
Semiconductor Today
EPC targets high-density motion systems with GaN ePower Stage technology
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has introduced the EPC91128, EPC91129, EPC91130 and EPC91131 evaluation boards — compact, high-perform
2026-06-04
natlawreview.com
2026-06-04
The National Law Review
EPC Targets High-Density Motion Systems with GaN ePower™ Stage Technology
EPC Targets High-Density Motion Systems with GaN ePower™ Stage Technology
Press Release Date 06-03-2026
GaN BLDC Inverter Platforms
EPC91128–EPC91131 boards enable rapid BLDC inverter development supporting up to 29 ARMS phase current.
These new inverter evaluation boards represent an important step in making Ga
2026-06-04
www.01net.it
2026-06-04
01net
www.01net.it
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2026-06-04
tomshardware.com
2026-06-04
Joe Shields
Tom's Hardware stopped by the ASRock booth, and was greeted by a wide variety of products at this year's Computex.
2026-06-03
www.standard-journal.com
2026-06-03
standard-journal.com
AP
JEDEC® Releases New SiC Guidelines to Improve Reliability and Evaluation in Power Electronics
Business Wire 9 hrs ago 0
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ARLINGTON, Va.--(BUSINESS WIRE)--Jun 3, 2026--
JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, announced the publication of JEP
2026-06-03
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2026-06-03
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2026-06-03
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2026-06-03
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2026-06-03
Low-power memory has evolved from its mobile device roots to meet the demands of AI data centers.
2026-06-03
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2026-06-03
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2026-06-03
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2026-06-03
bioengineer.org
2026-06-03
Bioengineer.org
The Fraunhofer Institute for Applied Solid State Physics (IAF) has unveiled a groundbreaking advancement in electric vehicle (EV) power electronics with the development of a gallium nitride (GaN)-based power electronics module tailored for 800 V bidirectional direct current (DC) charging systems. This innovative module, realized within the GaN4EmoBiL project—an initiative funded by the German Fede
2026-06-03
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2026-06-03
Stock Titan
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2026-06-03
www.eurekalert.org
2026-06-03
EurekAlert!
NEWS RELEASE 3-JUN-2026
GaN power electronics for bidirectional, single-phase DC electric vehicle charging
Fraunhofer IAF presents innovations at PCIM 2026
Reports and Proceedings
FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS
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IMAGE:
DEMONSTRATOR OF A BIDIRECTIONAL SINGLE-PHASE 3-KW DC CHARGER WITH GAN POWER ELECTRONICS. RESE
2026-06-03
www.eurekalert.org
2026-06-03
EurekAlert!
Power module with 1200-V-class GaN transistors (IMAGE)
FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS
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CAPTION
Close-up of the power module developed and manufactured at Fraunhofer IAF, featuring 1200-V-class GaN transistors on an insulating substrate for use in bidirectional DC charging systems
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© Fraunhofer IAF
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2026-06-03
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2026-06-03
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2026-06-03
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2026-06-03
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2026-06-03
Bisinfotech
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Home/ Semiconductor Component/ROHM’s SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
ROHM’s SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
Vaishali Chauhan June 3, 2026
2 minutes read
ROHM Co., Ltd. has announced that its 750 V SiC MOSFET has been adopted in a BBU (Battery Backup Unit) for AI server power supplies. With the rise of generative AI,