Infineon CoolGaN BDS Chips Splash Portable Power Footprint by 82% - ELE Times

Infineon has expanded its CoolGaN BDS 40 V G3 bidirectional switch family with two new devices, the IGK048B041S and IGK120B041S, achieving an 82% reduction in PCB footprint and halving component count... Read original →

Infineon’s CoolGaN BDS chips aren’t just shrinking PCBs—they’re collapsing the silicon MOSFET stack in sub-100W fast charging. By monolithically integrating bidirectional switching, they force upstream OSATs and foundries like TSMC and Vanguard to accelerate WLCSP/300mm GaN-on-Si co-optimization. Regulatory tailwinds from the EU Battery Regulation and U.S. IRA amplify Infineon’s cost advantage via high-yield 300mm manufacturing, while smaller rivals face compliance-driven margin erosion. Competitors like Navitas will likely double down on IP licensing or OEM lock-ins with brands such as Anker. Within 18 months, GaN will cross the inflection point in consumer fast chargers, but Infineon’s real play is securing the power backbone for next-gen AI wearables—where footprint and efficiency dictate system viability.