Feed Deep Dive MatrixDeep Water EN Subscribe About

Semiconductor News & Analysis Feed

20 articles
Trending Companies
Nvidia25 NVIDIA24 Microsoft20 TSMC8 Samsung8 Intel7 AMD7 Micron5 Anthropic4 Apple4 SpaceX4 HP4
Trending Technologies
RTX Spark20 AI8 Terafab7 Surface Laptop Ultra6 Surface5 Agentic AI5 GPU4 GAA4 Windows4 AI agents3 DRAM3 HBM3
2026-09-30
L&T Semiconductor Technologies unveils a 1,200 V SiC MOSFET platform for EV fast chargers - Charged EVs
0.95
chargedevs.com 2026-09-30
2026-09-25
Toshiba launches 3300V SiC MOSFET module - Semiconductor Today
0.95
www.semiconductor-today.com 2026-09-25
2026-09-25
Toshiba launches dual sic MOSFET module for industrial equipment - Borneo Bulletin
0.95
borneobulletin.com.bn 2026-09-25
2026-09-24
ROHM’s SiC MOSFETs go into BMW’s Neue Klasse electric powertrain - Charged EVs
0.92
chargedevs.com 2026-09-24
2026-09-24
Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment - The Joplin Globe
0.95
www.joplinglobe.com 2026-09-24
2026-09-24
Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment - Bluefield Daily Telegraph
0.95
www.bdtonline.com 2026-09-24
2026-09-24
Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment - Eagle-Tribune
0.95
www.eagletribune.com 2026-09-24
2026-09-24
Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment - newspressnow.com
0.95
www.newspressnow.com 2026-09-24
2026-09-24
Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment - businesswire.com
0.95
news.google.com 2026-09-24
2026-09-24
Toshiba Launches 3300V SiC MOSFET Module with H… - uniindia.com
0.95
www.uniindia.com 2026-09-24
2026-09-17
DB HiTek qualifies its 1,200 V SiC MOSFET process on 8-inch wafers - Charged EVs
0.93
chargedevs.com 2026-09-17
2026-09-14
DB HiTek Qualifies 1,200V SiC MOSFET Process on 8in Wafers - EE Times Asia
0.95
news.google.com 2026-09-14
2026-09-10
World's First SiC Superjunction MOSFET Debuts With 1,635V Rating and Near-Zero Thermal Drift - XenoSpectrum
0.85
xenospectrum.com 2026-09-10
The world's first 1,635V silicon carbide (SiC) superjunction MOSFET has been commercialized by AlkaidSemi, a Shanghai-based power semiconductor company, marking a significant breakthrough in high-voltage device performance. The device achieves an extremely low specific on-resistance of 1.27 mΩ⋅cm² a
Silicon CarbidePower SemiconductorSuperjunction TechnologyMOSFETThermal DriftSiC DeviceElectric VehiclesAI Data Centers
2026-09-10
DB HiTek Qualifies 1,200V SiC MOSFET Process Technology - Bisinfotech
0.95
www.bisinfotech.com 2026-09-10
2026-09-10
DB HiTek completes reliability qualification for 8-inch SiC MOSFET process - digitimes
0.95
www.digitimes.com 2026-09-10
2026-09-10
DB HiTek completes reliability qualification for 8-inch SiC MOSFET process
0.95
digitimes.com 2026-09-10
2026-09-09
DB HiTek Completes Reliability Qualification for 8-Inch 1,200 V SiC MOSFET Process - PR Newswire
0.95
www.prnewswire.com 2026-09-09
2026-09-09
DB HiTek Completes Reliability Qualification for 8-Inch 1,200 V SiC MOSFET Process - PR Newswire UK
0.95
www.prnewswire.co.uk 2026-09-09
2026-09-09
DB HiTek Completes Reliability Qualification for 8-Inch 1,200 V SiC MOSFET Process - macaubusiness.com
0.95
macaubusiness.com 2026-09-09
2026-09-09
DB HiTek Completes Reliability Qualification for 8-Inch 1,200 V SiC MOSFET Process - Macau Business
0.95
macaubusiness.com 2026-09-09