Semiconductor News & Analysis Feed
87 articles
2026-07-08
www.electronicsweekly.com
2026-07-08
Electronics Weekly
2026-07-07
www.dpaonthenet.net
2026-07-07
DPA Magazine
2026-07-07
digitimes.com
2026-07-07
AI server demand is lifting shipments of motor-related power devices at Cystech Electronics, helping the Taiwanese MOSFET and diode designer grow first-half 2026 revenue despite memory shortages weighing on networking products. Wafer foundry and packaging capacity remain tight, with rush orders pushing standard lead times from 180 days to 270 days, according to supply chain sources.
2026-07-02
engineerlive.com
2026-07-02
Engineer Live
2026-07-01
www.newelectronics.co.uk
2026-07-01
New Electronics
2026-06-23
chargedevs.com
2026-06-23
Charged EVs
chargedevs.com
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2026-06-22
chargedevs.com
2026-06-22
Charged EVs
chargedevs.com
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2026-06-17
chargedevs.com
2026-06-17
Charged EVs
chargedevs.com
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2026-06-16
www.ad-hoc-news.de
2026-06-16
AD HOC NEWS
ON Semiconductor, US6821891035
Onsemi EliteSiC MOSFET promises cooler, more efficient power for demanding designs
16.06.2026 - 17:52:38 | ad-hoc-news.de
Engineers pushing the limits of EV, solar or industrial power stages get a new flagship SiC MOSFET option from Onsemi.
ON Semiconductor, US6821891035
Onsemi EliteSiC MOSFET 1200 V 40 m? aims to become the cool-running heart of your next high-po
2026-06-16
www.ad-hoc-news.de
2026-06-16
AD HOC NEWS
Resonac, JP3521500008
New SiC power module push, Resonac Hipo™ MOSFET aims at next-gen EV inverters
16.06.2026 - 13:43:03 | ad-hoc-news.de
Resonac is expanding its silicon carbide portfolio with the Hipo SiC MOSFET module line, targeting high-efficiency inverters for electric vehicles and industrial drives. The modules focus on low loss, high reliability and support for 800-volt architectures in
2026-06-15
www.ad-hoc-news.de
2026-06-15
AD HOC NEWS
ON Semiconductor, US6821891035
High-efficiency drive: how onsemi’s EliteSiC 1200 V MOSFET targets EV inverters
15.06.2026 - 11:58:52 | ad-hoc-news.de
Onsemi’s EliteSiC 1200 V MOSFET family sits at the heart of many next-generation electric vehicle inverters, promising higher efficiency, lower losses and more compact designs for automakers and Tier-1 suppliers focused on range and cost.
ON Semico
2026-06-14
www.ad-hoc-news.de
2026-06-14
AD HOC NEWS
Infineon, DE0006231004
Infineon CoolMOS CFD7A: automotive MOSFET platform for 800 V powertrains
14.06.2026 - 17:31:32 | ad-hoc-news.de
Infineon’s CoolMOS CFD7A automotive-qualified superjunction MOSFET family targets 400 V and 800 V electric powertrains, combining low switching losses with robust short-circuit capability for on-board chargers and DC-DC converters.
Infineon - Stiller Moment vor d
2026-06-13
www.ad-hoc-news.de
2026-06-13
AD HOC NEWS
Infineon, DE0006231004
Infineon OptiMOS 8 100 V MOSFETs: Efficient power chips for motor drives and battery systems
12.06.2026 - 22:42:16 | ad-hoc-news.de
Infineon’s OptiMOS 8 100 V power MOSFET family targets brushless DC motor drives and battery protection with lower losses, compact packaging, and automotive-ready reliability for designers of e-mobility, power tools, and industrial equipment.
2026-06-12
www.ad-hoc-news.de
2026-06-12
AD HOC NEWS
Rohm, JP3982800009
Rohm SCT4013DLL 750 V SiC MOSFET: AI-ready power device for modern data centers
12.06.2026 - 15:54:08 | ad-hoc-news.de
Rohm's SCT4013DLL 750 V SiC MOSFET targets high-efficiency, high-voltage power stages in AI server battery backup units and industrial systems, combining low loss, compact packaging and robust reliability for demanding data center and power applications.
Rohm
2026-06-12
www.bisinfotech.com
2026-06-12
Bisinfotech
www.bisinfotech.com
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2026-06-12
www.eenewseurope.com
2026-06-12
eeNews Europe
ROHM has developed the TSC3PAK, a top-side cooling package for SiC MOSFETs aimed at high-voltage power conversion in electric vehicles and industrial systems. The 14.00 × 18.58 × 3.50 mm surface-mount package is designed to combine automated mounting with heat dissipation closer to conventional through-hole packages such as TO-247-4L.
2026-06-11
www.automotivepowertraintechnologyinternational.com
2026-06-11
Automotive Powertrain Technology International
ROHM has unveiled the TSC3PAK (14.00 x 18.58 x 3.50mm) cooling package for SiC MOSFETs, which adopts a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, enabling automated mounting while achieving heat dissipation performance comparable to that of conventional through-hole packages (TO-247-4L). This contributes to greater efficiency and reliabi
2026-06-11
www.newelectronics.co.uk
2026-06-11
New Electronics
www.newelectronics.co.uk
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2026-06-10
www.semiconductor-today.com
2026-06-10
Semiconductor Today
ROHM has developed the TSC3PAK (14.00mm x 18.58mm x 3.50mm) package for silicon carbide (SiC) MOSFETs. Mass production began in June.
Picture: ROHM’s new top-side-cooling package for SiC MOSFETs.
By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the new product enables automated mounting while achieving heat dissipation performa
2026-06-10
www.manilatimes.net
2026-06-10
The Manila Times
KYOTO, Japan, June 10, 2026 /PRNewswire/ -- ROHM Co., Ltd. has developed the TSC3PAK (14.00 x 18.58 x 3.50 mm) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the new product enables automated mounting while achieving heat dissipation performance comparable to that of conventional through-hole packages (