Domestic GaN Semiconductor Surpasses 700GHz Barrier… Achieves World’s Highest Performance with IVWORKS Technology - 벤처스퀘어

Researchers in South Korea have achieved a major breakthrough in next-generation compound semiconductors, demonstrating world-class ultra-high frequency performance. Semiconductor materials company IV... Read original →

South Korea’s 742 GHz GaN HEMT breakthrough using IVWorks’ reGaN process doesn’t just dethrone InP in the THz domain—it accelerates the obsolescence of GaAs and SiGe RF solutions. Upstream MBE toolmakers now face urgent Hybrid-MBE compatibility demands, while downstream 5G-Advanced and satellite comms modules must redesign impedance architectures. The U.S. BIS is likely to restrict reGaN-related equipment and EDA tools, pushing foundries like QSI to absorb >15% higher cleanroom compliance costs. Wolfspeed and Qorvo may deploy cross-licensing tactics to delay commercialization, but TSMC (Taiwan, China) risks losing RF foundry share if it can’t match this GaN-on-SiC performance within 24 months. Over the next 18 months, expect material migration beyond telecom—into mmWave radar and quantum interconnects—yet IVWorks’ lead hinges on rapid IP fortification before IMEC or Leti leapfrog with heterogeneous integration.