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This study presents an AlGaN/GaN high-electron-mobility transistor (HEMT)-based hydrogen sensor integrating a Wheatstone bridge and on-chip microheater, achieving 0.1 ppm detection capability. The device employs a four-HEMT Wheatstone bridge configuration with two Pd-gated sensing HEMTs and two pass

As the space and defense sectors increasingly demand high-performance computing and real-time data processing, the need for efficient, reliable, and compact power devices has become critical. Gallium nitride (GaN) high-electron mobility transistors (HEMTs) are emerging as a transformative technology