Infineon trims PCB space for CoolGaN power switching ... - eeNews Europe

Infineon has expanded its CoolGaN BDS 40 V G3 bidirectional switch family with two new devices tailored for compact portable electronics such as smartphones, notebooks, and wearables. These components... Read original →

Infineon’s WLCSP-integrated bidirectional CoolGaN switch isn’t just a packaging breakthrough—it ignites a cascade across the low-voltage power stack: foundries must accelerate 300mm GaN yield ramp, while OEMs can now collapse multi-rail architectures and slash BOM costs. Though GaN remains outside current export controls, its entanglement with 5G and fast-charging ecosystems has triggered EU/US reassessments of wide-bandgap supply chain security, compelling firms to diversify manufacturing to Taiwan, China and Malaysia. Competitors like Navitas and GaN Systems will likely pivot toward SoC-level integration or high-voltage industrial niches to sidestep Infineon’s 40V dominance. Within 18 months, sub-65W USB-PD modules in consumer devices will largely abandon silicon MOSFETs, pushing GaN adoption from under 15% to over 40% and cementing a new paradigm of ultra-compact, high-efficiency power delivery.