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Onsemi EliteSiC MOSFET promises cooler, more efficient power for demanding designs - AD HOC NEWS

www.ad-hoc-news.de 2026-06-16 AD HOC NEWS
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Tags
Silicon CarbideMOSFETPower SemiconductorElectric VehicleSolar InverterIndustrial DrivePower ManagementThermal DesignWide BandgapAutomotive ElectronicsPower DensitySwitching Loss
News Summary
Onsemi has introduced its new EliteSiC MOSFET, designed to deliver more efficient and cooler power performance for demanding applications such as electric vehicles, solar inverters, and industrial dri... Read original →
Industry Analysis
onsemi’s EliteSiC MOSFET isn’t just a component refresh—it triggers a cascade across the power electronics stack. Its 1200V/40mΩ spec forces redesigns in magnetics, thermal systems, and PCB layout, especially accelerating 800V EV platform adoption. Geopolitically, U.S. CHIPS Act incentives favor domestic IDMs like onsemi, yet supply chain fragility persists due to export controls on SiC substrates from Taiwan, China and mainland China. Competitors Infineon and STMicroelectronics will likely counter by fast-tracking 8-inch SiC fabs and bundling gate drivers into integrated solutions. Within 18 months, price competition will shift from 650V to 1200V segments, and only players with vertical integration—from substrate to device—will capture dominant share in industrial and solar inverter markets.
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