ROHM's 750V SiC MOSFET Adopted for AI Server Battery Backup Units - thelec.net

Japanese semiconductor manufacturer ROHM announced on May 21, 2026, that its 750V silicon carbide MOSFET (SiC MOSFET) has been adopted in battery backup units (BBUs) for artificial intelligence (AI) s... Read original →

ROHM’s 750V SiC MOSFET adoption in AI server BBUs signals HVDC architecture’s tipping point in data centers. Technically, it pressures upstream gate drivers and packaging to handle higher dv/dt and thermal loads, while accelerating downstream migration from 48V to 380V DC bus designs. Regulatory shifts—like EU ERP Lot 9—will force premature adoption of wide-bandgap devices to preempt compliance costs. Competitors like Infineon and Wolfspeed will likely counter by fast-tracking sub-1200V SiC offerings tailored for BBUs, possibly bundling with NVIDIA or Supermicro server platforms. Within 18 months, SiC penetration in backup power could surge from under 5% to over 20%, turning BBUs into a critical reliability proving ground—especially for Chinese players like Sanan and China Resources Micro, where this niche becomes both gateway and gatekeeper.