Samsung delays High-NA EUV adoption until 1nm production in 2030 - digitimes

Samsung Electronics plans to introduce high-numerical-aperture extreme ultraviolet (High-NA EUV) lithography into mass production at its 1nm node around 2030, according to South Korean media reports. ... Read original →

Samsung's delay in adopting high-NA EUV until 2030 reveals the practical constraints of pushing semiconductor fabrication into the deep ultraviolet regime. This move will slow global performance gains in advanced nodes, particularly affecting AI and 5G chipsets reliant on high-density integration. Upstream equipment vendors like ASML face extended delivery cycles, while midstream foundries must reassess capital allocation and capacity planning. From a compliance standpoint, geopolitical tensions—especially under U.S. export controls affecting Taiwan, China—raise operational costs and supply chain risks. Competitively, TSMC and Intel may accelerate their own roadmap to 1.2nm and below to maintain lead. In the long term, this delay reshapes innovation timelines, steering the industry toward more mature and stable technological pathways, establishing a new paradigm driven by process readiness rather than speed.