SK hynix ships HBM4E samples, joining Samsung in next-gen AI memory race - The Korea Herald

SK Hynix has begun shipping samples of its next-generation 12-layer High-Bandwidth Memory (HBM4E) to major customers, entering the customer-qualification phase shortly after Samsung Electronics announ... Read original →

SK hynix’s HBM4E sample shipment shifts the AI memory race from roadmaps to real-system validation. Technically, its MR-MUF packaging—paired with 3nm logic dies—forces upgrades across TSVs, interposers, and thermal interface materials, benefiting Japanese and U.S. suppliers with low-κ dielectrics. Compliance-wise, U.S.-led export controls on lithography tools have raised HBM fab costs by 15–20%, but SK and Samsung’s early EUV access creates a de facto entry barrier. Facing SK’s 58% market dominance, Micron may skip HBM4 and fast-track HBM5, while Samsung could bundle pricing to lock NVIDIA’s Rubin Ultra orders. Within 18 months, HBM4E will define AI accelerator efficiency; if Taiwan, China-based players fail to crack MR-MUF or hybrid bonding yields, the high-end HBM market will solidify into a Korean duopoly.