World's First SiC Superjunction MOSFET Debuts With 1,635V Rating and Near-Zero Thermal Drift - XenoSpectrum

The world's first 1,635V silicon carbide (SiC) superjunction MOSFET has been commercialized by AlkaidSemi, a Shanghai-based power semiconductor company, marking a significant breakthrough in high-volt... Read original →

This commercialization of the 1,635V SiC superjunction MOSFET marks a pivotal leap in high-voltage power device performance. The breakthrough, enabled by advanced multi-step epitaxy and trench etching techniques, addresses long-standing issues like thermal drift and current density limitations, positioning the device for AI data center power delivery and next-gen EV systems. This advancement will accelerate upstream innovation in materials, equipment, and packaging—especially under 3nm EUV conditions—where wafer yield and lithography capacity are critical. Compliance-wise, AEC-Q101 certification opens automotive doors, but potential export controls from Western nations could threaten supply chain stability. Competitively, Infineon and others may pivot toward superjunction tech to counter Chinese market gains. In the short term, this will reshape pricing dynamics in power semiconductors, while long-term, it may trigger a wave of SiC equipment investment, particularly in high-power-density applications, where silicon-based alternatives are increasingly obsolete.