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WIN Semiconductors has qualified the process behind its NP12-0B GaN platform for 40 V operation, extending the 0.12 μm GaN-on-SiC technology into higher-power RF front-end designs. The Taiwanese pure-play compound semiconductor foundry says the qualification covers power amplifiers, transmit/receive switches and single-chip front-end monolithic microwave integrated circuits (MMICs). The platform

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