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This technological breakthrough represents a significant advancement in the semiconductor industry's mmWave communication capabilities. The successful integration of hexagonal boron nitride (hBN) switches onto gallium nitride (GaN) substrates opens new pathways for reconfigurable mmWave microchip de

This research represents a significant advancement in mmWave microchip technology, demonstrating the successful integration of reconfigurable mmWave switches based on two-dimensional hexagonal boron nitride (hBN) onto gallium nitride (GaN) platforms. The approach overcomes traditional bottlenecks in