Semiconductor News & Analysis Feed
14 articles
2026-10-02
news.google.com
2026-10-02
2026-10-01
www.semiconductor-today.com
2026-10-01
2026-10-01
www.newelectronics.co.uk
2026-10-01
2026-10-01
worldbusinessoutlook.com
2026-10-01
2026-10-01
2026-09-30
www.newspressnow.com
2026-09-30
2026-09-30
www.joplinglobe.com
2026-09-30
Renesas' launch of the industry's first dual-side-cooled 650V GaN device marks a significant inflection point in power semiconductor architecture for AI data centers. The strategic significance extends beyond the device itself: by co-defining the 8x8mm DSC PQFN footprint with major AI infrastructure
2026-09-30
au.finance.yahoo.com
2026-09-30
2026-09-30
www.morningstar.com
2026-09-30
2026-09-30
news.google.com
2026-09-30
2026-09-30
www.renesas.com
2026-09-30
2026-06-12
www.bisinfotech.com
2026-06-12
Nexperia's expansion of its 650V industrial-grade gallium nitride transistor portfolio represents a significant advancement in power semiconductor technology. As demand grows for high-efficiency power devices in new energy vehicles, industrial power supplies, and renewable energy systems, this move
2026-06-10
www.semiconductor-today.com
2026-06-10
Nexperia has expanded its 650V industrial-grade high-power gallium nitride (GaN) FET portfolio to meet the growing demand for advanced power conversion applications. The new lineup includes devices with RDS(on) resistances of 35mΩ, 50mΩ, and 70mΩ, available in standard packages such as TO-247-3, TO-
2026-06-05
www.newelectronics.co.uk
2026-06-05
Cambridge GaN Devices (CGD) has introduced a 650V gallium nitride (GaN) integrated circuit designed for automotive applications, aimed at improving electric vehicle (EV) powertrain efficiency. Based on CGD’s ICeGaN technology, the device supports smaller and lighter inverters, contributing to extend