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Nexperia expands 650V industrial-grade high-power GaN FET portfolio Discrete device designer and manufacturer Nexperia B.V. of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) has expanded its portfolio of 650V industrial-grade high-power gallium nitride (GaN) FETs for demanding power conversion applications. The portfolio includes devices

Share LinkedIn Teams WhatsApp Facebook Email X Neil Tyler 05 Jun 2026 More in Automotive Power Technology Cambridge GaN Devices’ 650V GaN IC to improve EV powertrain efficiency Product Launches 1 min read Cambridge GaN Devices (CGD) has developed a 650V gallium nitride (GaN) integrated circuit designed for automotive applications, aimed at improving inverter efficiency in electric vehicles