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2026-10-02
Renesas Targets 800V AI Data Centers with Dual-side-cooled 650V GaN - eetasia.com
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news.google.com 2026-10-02
2026-10-01
Renesas unveils first 650V GaN in dual-side-cooled 8mm x 8mm package for megawatt-scale AI data centers - Semiconductor Today
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www.semiconductor-today.com 2026-10-01
2026-10-01
Renesas introduces dual-side-cooled 650V GaN device for AI data centre power systems - New Electronics
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www.newelectronics.co.uk 2026-10-01
2026-10-01
Renesas Unveils Industry’s First 650V GaN Package for AI Data Centers - World Business Outlook
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worldbusinessoutlook.com 2026-10-01
2026-10-01
Renesas Unveils 650V GaN Package for AI Data Centers - TimesTech
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timestech.in 2026-10-01
2026-09-30
Renesas Unveils Industry's First 650V GaN in Dual-Side Cooled 8x8mm Package for Megawatt-Scale AI Data Centers - News-Press NOW
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www.newspressnow.com 2026-09-30
2026-09-30
Renesas Unveils Industry's First 650V GaN in Dual-Side Cooled 8x8mm Package for Megawatt-Scale AI Data Centers - The Joplin Globe
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www.joplinglobe.com 2026-09-30
Renesas' launch of the industry's first dual-side-cooled 650V GaN device marks a significant inflection point in power semiconductor architecture for AI data centers. The strategic significance extends beyond the device itself: by co-defining the 8x8mm DSC PQFN footprint with major AI infrastructure
GaNPower SemiconductorAI Data CenterHVDCDual-Side CoolingRenesas800V ArchitecturePower Density
2026-09-30
Renesas Unveils Industry's First 650V GaN in Dual-Side Cooled 8x8mm Package for Megawatt-Scale AI Data Centers - Yahoo Finance Australia
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au.finance.yahoo.com 2026-09-30
2026-09-30
Renesas Unveils Industry's First 650V GaN in Dual-Side Cooled 8x8mm Package for Megawatt-Scale AI Data Centers - Morningstar
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www.morningstar.com 2026-09-30
2026-09-30
Renesas Unveils Industry's First 650V GaN in Dual-Side Cooled 8x8mm Package for Megawatt-Scale AI Data Centers - Business Wire
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news.google.com 2026-09-30
2026-09-30
Renesas Unveils Industry's First 650V GaN in Dual-Side Cooled 8x8mm Package for Megawatt-Scale AI Data Centers - Renesas
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www.renesas.com 2026-09-30
2026-06-05
Cambridge GaN Devices’ 650V GaN IC to improve EV powertrain efficiency - New Electronics
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www.newelectronics.co.uk 2026-06-05
Cambridge GaN Devices (CGD) has introduced a 650V gallium nitride (GaN) integrated circuit designed for automotive applications, aimed at improving electric vehicle (EV) powertrain efficiency. Based on CGD’s ICeGaN technology, the device supports smaller and lighter inverters, contributing to extend
Gallium NitrideElectric VehiclesPower ElectronicsAutomotive ElectronicsInverter EfficiencyGaN ICPower ManagementEV Powertrain