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ON Semiconductor has unveiled its latest silicon carbide and gallium nitride (GaN)-based power module, the EliteSiC FastCharge Power Module, aimed at enhancing the efficiency and performance of next-generation DC fast charging systems. Designed for public chargers, fleet depots, and industrial power

Researchers at the Fraunhofer Institute for Applied Solid-State Physics (IAF) have developed a gallium nitride (GaN)-based power electronics module for 800 V bidirectional DC charging systems, as part of the GaN4EmoBiL project funded by Germany's Federal Ministry for Economic Affairs and Energy. The