A patent dispute between Infineon Technologies and China's Innoscience over gallium nitride (GaN) technology has escalated after the US International Trade Commission upheld a preliminary ruling finding that Innoscience had infringed one of Infineon's GaN-related patents.

As the global patent battle over gallium nitride (GaN) semiconductors intensifies, a recent ruling by the US International Trade Commission has deepened the rivalry between Infineon Technologies and China's Innoscience while also underscoring how geopolitics is increasingly shaping the future of the power semiconductor industry.