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Navitas has launched an isolated package for high-voltage SiC MOSFETs, marking a significant advancement in power semiconductor technology. This breakthrough addresses critical challenges in high-voltage applications while enhancing reliability and safety. The new packaging solution is particularly

Navitas Semiconductor has launched the UHV-TO-247-4-ISO package tailored for high-voltage silicon carbide (SiC) MOSFETs. The new design offers over 12mm creepage and more than 6000V integrated isolation, supporting Navitas’s 3300V, 2300V, and 1200V SiC MOSFETs. Featuring an aluminum nitride substrat

Navitas' launch of isolated packaging for high-voltage SiC MOSFETs represents a significant advancement in power semiconductor technology. This development addresses critical challenges in SiC device applications, particularly thermal management, driver circuits, and protection mechanisms. The techn