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87 articles
2026-06-10
www.thelec.net
2026-06-10
thelec.net
A sample interface of Elite Pairing Studio. (Source: onsemi website)
onsemi on June 8 unveiled an online design tool called Elite Pairing Studio that recommends combinations of silicon carbide (SiC) MOSFETs and gate drivers.
MOSFETs are power switches that control electrical current. Gate drivers are components that send switching signals to turn those power switches on and off. The two componen
2026-06-10
www.marketscreener.com
2026-06-10
marketscreener.com
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2026-06-09
investor.wolfspeed.com
2026-06-09
Wolfspeed
DURHAM, N.C.--(BUSINESS WIRE)-- Wolfspeed, an industry leader in silicon carbide, has introduced its fifth technology generation, demonstrating a substantial performance leap in efficiency for next-generation 1200 V and 750 V automotive and industrial applications.
“With Gen 4, Wolfspeed delivered the switching breakthrough our customers needed, and less than two years later we’re introducing Gen
2026-06-09
www.bisinfotech.com
2026-06-09
Bisinfotech
www.bisinfotech.com
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2026-06-09
www.tradingview.com
2026-06-09
TradingView
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Wolfspeed - Introduces Fifth-Generation Sic Mosfets For 1200 V And 750 V Applications
Wolfspeed - Introduces Fifth-Generation Sic Mosfets For 1200 V And 750 V Applications
RefinitivLess than 1 min read
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2026-06-09
www.voiceofalexandria.com
2026-06-09
Voice of Alexandria
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2026-06-09
www.bdtonline.com
2026-06-09
Bluefield Daily Telegraph
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2026-06-09
www.ncnewsonline.com
2026-06-09
New Castle News
DURHAM, N.C.--(BUSINESS WIRE)--Jun 9, 2026--
Wolfspeed, an industry leader in silicon carbide, has introduced its fifth technology generation, demonstrating a substantial performance leap in efficiency for next-generation 1200 V and 750 V automotive and industrial applications.
This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/202606098762
2026-06-09
www.mymalonetelegram.com
2026-06-09
The Malone Telegram
Wolfspeed Unveils the Industry’s Lowest RDS(ON) Silicon Carbide (SiC) MOSFETs in New Technology Generation
47 mins ago
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Wolfspeed, an industry leader in silicon carbide, has introduced its fifth technology generation, demonstrating a substantial performance leap in efficiency for next-generation 1200 V and 750 V automotive
2026-06-09
finance.yahoo.com
2026-06-09
Yahoo Finance
This is a paid press release. Contact the press release distributor directly with any inquiries.
Wolfspeed Unveils the Industry’s Lowest RDS(ON) Silicon Carbide (SiC) MOSFETs in New Technology Generation
Business Wire
Tue, June 9, 2026 at 3:00 AM PDT 5 min read
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Wolfspeed's Gen 5 SiC MOSFET technology delivers a breakthrough in specific on-resi
2026-06-09
news.google.com
2026-06-09
Business Wire
2026-06-09
www.semiconductor-today.com
2026-06-09
Semiconductor Today
Navitas introduces isolated through-hole package for 1200–3300V SiC MOSFETs
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has launched its new UHV‑TO‑247‑4‑ISO package, setting what is claimed to be a new benchmark for high‑performance discrete power devices.
Featuring over 12mm pin-to-pin creepage and greater than 6000V
2026-06-09
www.electronicsmedia.info
2026-06-09
Electronics Media
ROHM TSC3PAK SiC MOSFET Package Enables High-Efficiency Power Design for EVs
By Electronics Media -
June 9, 2026
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ROHM TSC3PAK SiC MOSFET Package – ROHM has developed the TSC3PAK (14.00 × 18.58 × 3.50mm) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the new product
2026-06-09
www.electronicsmedia.info
2026-06-09
Electronics Media
Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management
By Electronics Media -
June 9, 2026
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Isolated Through-Hole Package for SiC MOSFETs – Navitas Semiconductor (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors,
2026-06-09
www.automotiveworld.com
2026-06-09
Automotive World
QDPAK's top-side thermal path allows the PCB and semiconductor domains to be managed separately, unlocking more power in less space
June 9, 2026
Nexperia has launched 1200 V silicon carbide (SiC) MOSFETs in QDPAK packaging for electric vehicle (EV) and industrial power conversion, enabling up to 3 kW more output power than conventional D2PAK-7 devices at comparable thermal limits. The portfolio
2026-06-09
digitimes.com
2026-06-09
Onsemi has introduced an online design tool to help engineers match SiC MOSFETs and gate drivers more quickly. The company said the platform could reduce early-stage trial-and-error in power electronics, with potential implications for AI data centers, electric vehicles, industrial systems, and electrification infrastructure worldwide.
2026-06-09
www.ad-hoc-news.de
2026-06-09
AD HOC NEWS
Infineon, DE0006231004
Infineon OptiMOS Power MOSFETs: Efficient Switching for Modern Electronics
08.06.2026 - 20:09:56 | ad-hoc-news.de
Infineon OptiMOS power MOSFETs deliver efficient power switching for automotive, industrial, and consumer systems, supporting compact designs and lower energy losses in US and global applications.
Infineon, DE0006231004
Infineon OptiMOS power MOSFETs are desig
2026-06-09
www.semiconductor-today.com
2026-06-09
Semiconductor Today
onsemi introduces Elite Pairing Studio to simplify pairing SiC MOSFETs and gate drivers for power electronics design
Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has announced its Elite Pairing Studio, an industry-first online design tool that enables engineers to move beyond traditional component-level selection to quickly identify recommended combinations of silic
2026-06-09
www.electronicsweekly.com
2026-06-09
Electronics Weekly
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2026-06-08
www.investing.com
2026-06-08
Investing.com
www.investing.com
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