Semiconductor News & Analysis Feed

2 articles
2026-06-16
digitimes.com 2026-06-16
Samsung Electronics has secured key technology for a 5nm-class magnetoresistive random-access memory cell, according to Korean financial daily Sedaily, moving ahead just four months after presenting what it described as the world's first 8nm-class MRAM at an international conference.
2026-05-13
eetimes.com 2026-05-13 Gary Hilson
SNIA MRAM alliance looks to unite a broader ecosystem to encourage magnetoresistive random access #memory (#MRAM) adoption.