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This article presents a comprehensive analysis of Raman spectroscopy and photoluminescence characteristics of gallium nitride, which represents a crucial analytical approach in semiconductor materials research. Gallium nitride, as a significant wide-bandgap semiconductor material, finds extensive ap

As applications such as electric vehicles, fast-charging infrastructure, renewable energy systems, and industrial power conversion demand higher performance from power semiconductors, wide-bandgap materials like silicon carbide (SiC) and gallium nitride (GaN) are gaining prominence. These materials