www.eenewseurope.com
2026-06-11
eeNews Europe
WIN Semiconductors has qualified the process behind its NP12-0B GaN platform for 40 V operation, extending the 0.12 μm GaN-on-SiC technology into higher-power RF front-end designs.
The Taiwanese pure-play compound semiconductor foundry says the qualification covers power amplifiers, transmit/receive switches and single-chip front-end monolithic microwave integrated circuits (MMICs). The platform