Semiconductor News & Analysis Feed
17 articles
2026-06-12
www.eenewseurope.com
2026-06-12
eeNews Europe
ROHM has developed the TSC3PAK, a top-side cooling package for SiC MOSFETs aimed at high-voltage power conversion in electric vehicles and industrial systems. The 14.00 × 18.58 × 3.50 mm surface-mount package is designed to combine automated mounting with heat dissipation closer to conventional through-hole packages such as TO-247-4L.
2026-06-11
www.newelectronics.co.uk
2026-06-11
New Electronics
www.newelectronics.co.uk
Performing security verification
This website uses a security service to protect against malicious bots. This page is displayed while the website verifies you are not a bot.
Ray ID: a09b37af1b7ef3c4
Performance and Security by Cloudflare
Privacy
2026-06-10
www.semiconductor-today.com
2026-06-10
Semiconductor Today
ROHM has developed the TSC3PAK (14.00mm x 18.58mm x 3.50mm) package for silicon carbide (SiC) MOSFETs. Mass production began in June.
Picture: ROHM’s new top-side-cooling package for SiC MOSFETs.
By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the new product enables automated mounting while achieving heat dissipation performa
2026-06-10
www.manilatimes.net
2026-06-10
The Manila Times
KYOTO, Japan, June 10, 2026 /PRNewswire/ -- ROHM Co., Ltd. has developed the TSC3PAK (14.00 x 18.58 x 3.50 mm) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the new product enables automated mounting while achieving heat dissipation performance comparable to that of conventional through-hole packages (
2026-06-10
www.marketscreener.com
2026-06-10
marketscreener.com
Access Denied
You don't have permission to access "http://www.marketscreener.com/news/rohm-launches-new-top-side-cooling-package-for-sic-mosfets-ce7f5cdadd8ff727" on this server.
Reference #18.8cc83017.1781036239.636f2929
https://errors.edgesuite.net/18.8cc83017.1781036239.636f2929
2026-06-09
www.tradingview.com
2026-06-09
TradingView
News
/
Reuters
/
Wolfspeed - Introduces Fifth-Generation Sic Mosfets For 1200 V And 750 V Applications
Wolfspeed - Introduces Fifth-Generation Sic Mosfets For 1200 V And 750 V Applications
RefinitivLess than 1 min read
WOLF
+0.65%
© Copyright Thomson Reuters 2026. Click For Restrictions - https://agency.reuters.com/en/copyright.html
Sign in or create a free account to read this news
Join for free
2026-06-09
www.semiconductor-today.com
2026-06-09
Semiconductor Today
Navitas introduces isolated through-hole package for 1200–3300V SiC MOSFETs
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has launched its new UHV‑TO‑247‑4‑ISO package, setting what is claimed to be a new benchmark for high‑performance discrete power devices.
Featuring over 12mm pin-to-pin creepage and greater than 6000V
2026-06-09
www.electronicsmedia.info
2026-06-09
Electronics Media
Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management
By Electronics Media -
June 9, 2026
Share on Facebook Tweet on Twitter
tweet
Isolated Through-Hole Package for SiC MOSFETs – Navitas Semiconductor (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors,
2026-06-09
digitimes.com
2026-06-09
Onsemi has introduced an online design tool to help engineers match SiC MOSFETs and gate drivers more quickly. The company said the platform could reduce early-stage trial-and-error in power electronics, with potential implications for AI data centers, electric vehicles, industrial systems, and electrification infrastructure worldwide.
2026-06-09
www.semiconductor-today.com
2026-06-09
Semiconductor Today
onsemi introduces Elite Pairing Studio to simplify pairing SiC MOSFETs and gate drivers for power electronics design
Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has announced its Elite Pairing Studio, an industry-first online design tool that enables engineers to move beyond traditional component-level selection to quickly identify recommended combinations of silic
2026-06-09
www.electronicsweekly.com
2026-06-09
Electronics Weekly
__fail__
2026-06-08
www.investing.com
2026-06-08
Investing.com
www.investing.com
Performing security verification
This website uses a security service to protect against malicious bots. This page is displayed while the website verifies you are not a bot.
Ray ID: a08978af8a5654bb
Performance and Security by Cloudflare
Privacy
2026-06-08
za.investing.com
2026-06-08
Investing.com South Africa
Gold prices turn higher as oil prices pare gains, easing some inflation jitters
Wall Street opens higher as stocks rebound from previous session’s sell-off
TORRANCE, Calif. - Navitas Semiconductor (NASDAQ:NVTS) announced today the launch of its UHV-TO-247-4-ISO package designed for high-voltage silicon carbide MOSFETs, according to a press release statement.
The package features over 12mm pin-t
2026-06-08
ca.investing.com
2026-06-08
Investing.com Canada
ca.investing.com
Performing security verification
This website uses a security service to protect against malicious bots. This page is displayed while the website verifies you are not a bot.
Ray ID: a08828421a2ccb7e
Performance and Security by Cloudflare
Privacy
2026-06-08
www.manilatimes.net
2026-06-08
The Manila Times
Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management
Direct-cooled thermal management offered by a reflow-compatible, isolated thermal pad significantly improves power density, reliability, and efficiency.
Get the latest news delivered to your inbox
Sign up for The Manila Times newsletters
By signing up with an email address, I acknowledge t
2026-06-04
news.google.com
2026-06-04
elektroniknet
2026-05-15
www.prnewswire.com
2026-05-15
PR Newswire
__fail__