Semiconductor News & Analysis Feed
20 articles
2026-08-17
chargedevs.com
2026-08-17
2026-08-05
www.aninews.in
2026-08-05
2026-08-05
www.indiagazette.com
2026-08-05
2026-08-05
www.prnewswire.com
2026-08-05
2026-07-08
www.electronicsweekly.com
2026-07-08
2026-06-22
chargedevs.com
2026-06-22
onsemi's launch of an online tool for pairing SiC MOSFETs with gate drivers represents a significant advancement in electric vehicle charging technology. This innovation addresses the critical need for efficient power management in EV charging systems, where SiC MOSFETs offer superior performance ov
2026-06-17
chargedevs.com
2026-06-17
Wolfspeed's introduction of next-generation Gen 5 SiC MOSFETs represents a significant advancement in electric vehicle power semiconductor technology. These devices specifically target traction inverter applications, addressing critical efficiency and performance requirements for EV propulsion syste
2026-06-12
www.eenewseurope.com
2026-06-12
ROHM has introduced the TSC3PAK, a top-side cooling package for SiC MOSFETs designed for high-voltage power conversion in electric vehicles and industrial systems. This surface-mount package (14.00 × 18.58 × 3.50 mm) combines automated mounting with enhanced heat dissipation, approaching the perform
2026-06-11
www.newelectronics.co.uk
2026-06-11
Nexperia's introduction of 1200V SiC MOSFETs in QDPAK packaging represents a significant advancement in power semiconductor technology, specifically addressing critical thermal management challenges in high-power applications. This development targets key sectors including electric vehicles, industr
2026-06-10
www.semiconductor-today.com
2026-06-10
ROHM has launched a new top-side-cooling SiC MOSFET package, the TSC3PAK, designed to enhance power conversion efficiency and reliability in applications such as electric vehicle onboard chargers and compressors. By enabling automated mounting while maintaining heat dissipation performance comparabl
2026-06-10
www.manilatimes.net
2026-06-10
ROHM has launched a new TSC3PAK package for SiC MOSFETs, featuring a top-side cooling design that enables automated mounting while matching the heat dissipation performance of conventional through-hole packages like TO-247-4L. This innovation is particularly significant for electric vehicle applicat
2026-06-10
www.marketscreener.com
2026-06-10
ROHM's launch of a new top-side cooling package for SiC MOSFETs represents a significant advancement in power semiconductor technology, particularly for high-power applications in electric vehicles, industrial power supplies, and renewable energy systems. SiC MOSFETs are increasingly critical due to
2026-06-09
www.tradingview.com
2026-06-09
Wolfspeed has introduced its fifth-generation silicon carbide (SiC) MOSFETs designed for 1200V and 750V applications, marking a significant advancement in power semiconductor technology. These devices leverage the superior thermal stability, high breakdown voltage, and low on-resistance of SiC, maki
2026-06-09
www.semiconductor-today.com
2026-06-09
Navitas has introduced a new UHV-TO-247-4-ISO isolated through-hole package designed for 1200V to 3300V SiC MOSFETs, setting a new benchmark for high-performance discrete power devices. The package features over 12mm creepage distance and more than 6000V integrated isolation, delivering module-like
2026-06-09
www.electronicsmedia.info
2026-06-09
Navitas has introduced a new isolated through-hole package, the UHV-TO-247-4-ISO, tailored for 1200V to 3300V GeneSiC silicon carbide MOSFETs. This package delivers module-level performance in a compact discrete form factor, featuring over 6000V integrated isolation and direct-cooled thermal managem
2026-06-09
www.semiconductor-today.com
2026-06-09
onsemi has launched the industry-first Elite Pairing Studio, an online design tool aimed at simplifying the pairing of silicon carbide (SiC) MOSFETs with gate drivers in power electronics design. This tool streamlines the traditionally time-consuming process of component matching by guiding engineer
2026-06-09
www.electronicsweekly.com
2026-06-09
2026-06-08
www.investing.com
2026-06-08
Navitas has launched an isolated package for high-voltage SiC MOSFETs, marking a significant advancement in power semiconductor technology. This breakthrough addresses critical challenges in high-voltage applications while enhancing reliability and safety. The new packaging solution is particularly
2026-06-08
za.investing.com
2026-06-08
Navitas Semiconductor has launched the UHV-TO-247-4-ISO package tailored for high-voltage silicon carbide (SiC) MOSFETs. The new design offers over 12mm creepage and more than 6000V integrated isolation, supporting Navitas’s 3300V, 2300V, and 1200V SiC MOSFETs. Featuring an aluminum nitride substrat
2026-06-08
ca.investing.com
2026-06-08
Navitas' launch of isolated packaging for high-voltage SiC MOSFETs represents a significant advancement in power semiconductor technology. This development addresses critical challenges in SiC device applications, particularly thermal management, driver circuits, and protection mechanisms. The techn