Semiconductor News & Analysis Feed
14 articles
2026-10-07
news.google.com
2026-10-07
2026-10-05
www.eejournal.com
2026-10-05
2026-10-03
2026-08-05
tech.yahoo.com
2026-08-05
2026-08-05
www.techradar.com
2026-08-05
2026-07-10
www.nature.com
2026-07-10
This study investigates the relationship between effective Rabi frequency and the formation of harmonic frequency combs (HFCs) in ultrafast semiconductor lasers. Using Effective Semiconductor Maxwell-Bloch Equations (ESMBEs), the authors model a unidirectional ring quantum cascade laser (QCL) and de
2026-07-01
www.eejournal.com
2026-07-01
Keysight Technologies and WIN Semiconductors have collaborated to introduce a new GaN MMIC design workflow aimed at reducing design risks for high-frequency RF components. This integrated workflow combines on-chip multi-domain simulation, 3D layout verification, and off-chip MMIC evaluation board de
2026-06-24
www.marketscreener.com
2026-06-24
GlobalFoundries has successfully validated its SLATE advanced packaging technology on the 9SW platform, marking a significant advancement for next-generation RF applications. This validation demonstrates GlobalFoundries' technical capabilities in advanced packaging and strengthens its competitive po
2026-06-23
www.manilatimes.net
2026-06-23
GlobalFoundries has announced that its SLATE™ wafer-to-wafer bonding technology is now production-ready on its industry-leading 9SW radio-frequency silicon-on-insulator (RF-SOI) platform, enabling compact and high-performance front-end modules (FEMs) for next-generation 5G devices. Manufactured at i
2026-06-23
gf.com
2026-06-23
GlobalFoundries announces advanced packaging technology adoption on its 9SW platform for next-generation radio frequency applications, marking a significant advancement in semiconductor manufacturing. The 9SW platform's integration of advanced packaging techniques enables substantial performance and
2026-06-23
www.asiae.co.kr
2026-06-23
Researchers led by Professor Daehyun Kim from Kyungpook National University have achieved a world-first breakthrough in gallium nitride (GaN) high electron mobility transistor (HEMT) technology, reaching a maximum oscillation frequency (fmax) of 742 GHz—exceeding the 700 GHz threshold for the first
2026-06-14
www.indexbox.io
2026-06-14
According to IndexBox market analysis report, the frequency tripler market is projected to achieve significant growth by 2035, primarily driven by surging demand for UV lasers and advances in semiconductor lithography technology. Frequency multipliers, as critical components in laser systems, can tr
2026-06-04
news.google.com
2026-06-04
2026-05-28
www.eurekalert.org
2026-05-28