STMicroelectronics’ new GaN semiconductors improve energy efficiency for high-demand applications from AI servers to robotics - STMicroelectronics

STMicroelectronics has launched a new line of 700V gallium nitride (GaN) power semiconductors aimed at improving energy efficiency in high-demand applications such as AI servers, robotics, industrial ... Read original →

STMicroelectronics’ 700V GaN launch signals a strategic pivot from SiC toward GaN in high-voltage power electronics. Technically, the zero reverse-recovery charge and low RDS(on) of GaN HEMTs will push power architectures into MHz-range switching, forcing co-evolution in magnetics, gate drivers, and thermal solutions. Regulatory-wise, the EU’s Net-Zero Industry Act mandates domestic advanced semiconductor capacity—ST leverages GaN to bolster European supply autonomy but faces spillover risks from U.S. CHIPS export controls on wide-bandgap materials. Competitively, Infineon and Wolfspeed will likely accelerate hybrid GaN-SiC roadmaps, while fabless players like Navitas and EPC may counter with AI-server-specific power designs. Within 18 months, GaN will aggressively displace silicon MOSFETs in the 48V–800V mid-voltage segment, becoming a decisive factor in AI data center energy-efficiency races.